dpg 15 i 200 pa ns hiperfred2 symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 240 i a v f 1.26 r 1.70 k/w v r = 1 3 min. 15 t = 10 ms applications: v rrm v 200 1 t vj vc = t vj c =ma 0.08 package: part number v r = t vj =c i f =a v t c = 140c d = p tot 90 w t c c = t vj 175 c -55 v i rrm = = 200 15 15 t vj = 45c dpg 15 i 200 pa v a 200 v 200 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 1.51 t vj c =25 c j j unction capacitance v = v; t 150 v f0 v 0.69 t vj = 175c r f 18 f = 1 mhz = c 25 m ? v 1.01 t vj =c i f =a v 15 1.29 i f =a 30 i f =a 30 threshold voltage slope resistance for power loss calculation only backside: cathode 3a t vj =c reverse recovery time a 6.5 35 55 ns (50 hz), sine t rr = 35 ns housing: high performance fast recovery diode low loss and soft recovery single diode to-220 r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj i rm max. reverse recovery current i f =a; 15 25 t= 125c vj -di f =a/s 200 /dt t rr v r =v 130 t vj =c 25 t= 125c vj a 20 150 pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) fav average forward current fav 150 ixys reserves the right to change limits, conditions and dimensions. ? 20100125a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 15 i 200 pa i rms a per terminal 35 r thch k/w 0.50 m d nm 0.6 mounting torque 0.4 t stg c 150 storage temperature -55 weight g 2 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit f c n 60 mounting force with clip 20 ordering delivering mode base qty code key standard part name dpg 15 i 200 pa 506661 tube 50 xxxxxx yyww logo marking on product datecode assembly code abcdef product marking d p g 15 i 200 pa part number diode hiperfred extreme fast single diode to-220ac (2) = = = marking on product DPG15I200PA current rating [a] reverse voltage [v] = = = = ixys reserves the right to change limits, conditions and dimensions. ? 20100125a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 15 i 200 pa dim. millimeter inches min. max. min. max. a 4.32 4.82 0.170 0.190 a1 1.14 1.39 0.045 0.055 a2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 c 0.35 0.56 0.014 0.022 d 14.73 16.00 0.580 0.630 e 9.91 10.66 0.390 0.420 e 5.08 bsc 0.200 bsc h1 5.85 6.85 0.230 0.270 l 12.70 13.97 0.500 0.550 l1 2.79 5.84 0.110 0.230 ?p 3.54 4.08 0.139 0.161 q 2.54 3.18 0.100 0.125 3x b2 e ?p q d l1 l 3x b e c a2 h1 a1 a outlines to-220 ixys reserves the right to change limits, conditions and dimensions. ? 20100125a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
dpg 15 i 200 pa 100 300 500 0 200 400 600 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj [c] 0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 0 100 200 300 400 v fr [v] 0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 70 80 i rm [a] q rr [c] i f [a] v f [v] -di f /dt [a/s] t rr [ns] v fr t fr i rm q rr 7.5 a -di f /dt [a/s] -di f /dt [a/s] 7.5 a 15 a i f =30 a -di f /dt [a/s] t fr [ns] 1 10 100 1000 10000 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t [ms] z thjc [k/w] 0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 e rec [j] -di f /dt [a/s] 30 a 15 a fig. 1 forward current i f vs. v f fig. 2 typ. reverse recovery charge q rr versus -di f /dt fig. 3 typ. peak reverse current i rm versus -di f /dt fig. 4 dynamic parameters q rr , i rm versus t vj fig. 5 typ. recovery time t rr vs. -di f /dt fig. 6 typ. peak forward voltage v fr and t fr versus di f /dt fig. 7 typ. recovery energy e rec versus -di f /dt fig. 8 transient thermal resistance junction to case t vj = 25c 150c i f = 30 a i f = 15 a i f =7.5a i f =30 a i f =15 a i f =7.5 a t vj = 125c v r = 130 v t vj = 125c v r =130v t vj = 125c v r = 130 v t vj = 125c i f = 15 a v r =130v t vj = 125c v r =130 v ixys reserves the right to change limits, conditions and dimensions. ? 20100125a data according to iec 60747and per diode unless otherwise specified 2010 ixys all rights reserved
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